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MRF6S9125NR1/nbr1 replaced by mrfe6s9125nr1/nbr1. refer to device migration pcn12895 for more details. MRF6S9125NR1 mrf6s9125nbr1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial an d industrial applications with frequencies up to 1000 mhz. the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. n - cdma application ? typical single - carrier n - cdma performance: v dd = 28 volts, i dq = 950 ma, p out = 27 watt avg., full frequency band (865 - 960 mhz), is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 20.2 db drain efficiency ? 31% acpr @ 750 khz offset = - 47.1 dbc in 30 khz bandwidth gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 700 ma, p out = 60 watts avg., full frequency band (865 - 960 mhz or 921 - 960 mhz) power gain ? 20 db drain efficiency ? 40% spectral regrowth @ 400 khz offset = - 63 dbc spectral regrowth @ 600 khz offset = - 78 dbc evm ? 1.8% rms gsm application ? typical gsm performance: v dd = 28 volts, i dq = 700 ma, p out = 125 watts, full frequency band (921 - 960 mhz) power gain ? 19 db drain efficiency ? 62% ? capable of handling 10:1 vswr, @ 28 vdc, 880 mhz, 125 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? 225 c capable plastic package ? n suffix indicates lead - free terminations. rohs compliant. ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. lifetime buy last order 3 apr 08 last ship 1 oct 08 document number: mrf6s9125n rev. 5, 8/2008 freescale semiconductor technical data MRF6S9125NR1 mrf6s9125nbr1 865 - 960 mhz, 27 w avg., 28 v single n - cdma, gsm edge lateral n - channel rf power mosfets case 1486 - 03, style 1 to - 270 wb - 4 plastic MRF6S9125NR1 case 1484 - 04, style 1 to - 272 wb - 4 plastic mrf6s9125nbr1 ? freescale semiconductor, inc., 2006, 2008. all rights reserved.
2 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 125 w cw case temperature 76 c, 27 w cw r jc 0.44 0.45 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) c (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 400 adc) v gs(th) 1 2.1 3 vdc gate quiescent voltage (v dd = 28 vdc, i d = 950 madc, measured in functional test) v gs(q) 2 2.89 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 2.74 adc) v ds(on) 0.05 0.23 0.3 vdc dynamic characteristics (3) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 60 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 950 ma, p out = 27 w avg. n - cdma, f = 880 mhz, single - carrier n - cdma, 1.2288 mhz channel bandwidth carrier. acpr measured in 30 khz channel bandwidth @ 750 khz offset. par = 9.8 db @ 0.01% probability on ccdf. power gain g ps 19 20.2 24 db drain efficiency d 29 31 ? % adjacent channel power ratio acpr ? - 47.1 -45 dbc input return loss irl ? -16 -9 db 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. 3. part is internally input matched. (continued) lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9125NR1 mrf6s9125nbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical gsm edge performances (in freescale gsm edge test fixture, 50 ohm system) v dd = 28 vdc, i dq = 700 ma, p out = 60 w avg., 921 - 960 mhz, edge modulation power gain g ps ? 20 ? db drain efficiency d ? 40 ? % error vector magnitude evm ? 1.8 ? % rms spectral regrowth at 400 khz offset sr1 ? -63 ? dbc spectral regrowth at 600 khz offset sr2 ? -78 ? dbc typical cw performances (in freescale gsm test fixture, 50 ohm system) v dd = 28 vdc, i dq = 700 ma, p out = 125 w, 921 - 960 mhz power gain g ps ? 19 ? db drain efficiency d ? 62 ? % input return loss irl ? -12 ? db p out @ 1 db compression point, cw (f = 880 mhz) p1db ? 125 ? w lifetime buy last order 3 apr 08 last ship 1 oct 08
4 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 figure 1. MRF6S9125NR1(nbr1) test circuit schematic z10 0.057 x 0.620 microstrip z11 0.119 x 0.620 microstrip z12 0.450 x 0.220 microstrip z13 0.061 x 0.220 microstrip z14 0.078 x 0.220 microstrip z15 0.692 x 0.080 microstrip z16 0.368 x 0.080 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1, z17 0.200 x 0.080 microstrip z2 1.060 x 0.080 microstrip z3 0.382 x 0.220 microstrip z4 0.108 x 0.220 microstrip z5 0.200 x 0.420 x 0.620 taper z6 0.028 x 0.620 microstrip z7 0.236 x 0.620 microstrip z8 0.050 x 0.620 microstrip z9 0.238 x 0.620 microstrip r2 v bias v supply rf output rf input dut c3 l1 z1 c2 z2 z3 c1 z4 z5 z6 z7 c4 z8 z9 r1 l2 c10 c6 c11 c18 c20 c21 c22 c9 z10 z11 z12 z14 z15 + + + + c8 + c7 + c5 c12 c13 z13 c14 c15 c16 z16 c17 z17 c23 c19 table 6. MRF6S9125NR1(nbr1) test circuit component designations and values part description part number manufacturer c1 20 pf chip capacitor atc100b200ft500xt atc c2 6.2 pf chip capacitor atc100b6r2bt500xt atc c3, c15 0.8 - 8.0 pf variable capacitors, gigatrim 27291sl johanson c4, c5 11 pf chip capacitors atc100b110ft500xt atc c6, c18, c19 0.56 f, 50 v chip capacitors c1825c564j5rac kemet c7, c8 47 f, 16 v tantalum capacitors t491d476k016at kemet c9, c23 47 pf chip capacitors atc700b470ft500xt atc c10 100 f, 50 v electrolytic capacitor mcht101m1hb - 1017 - rf multicomp c11, c12 12 pf chip capacitors atc100b120ft500xt atc c13, c14 5.1 pf chip capacitors atc100b5r1bt500xt atc c16 0.3 pf chip capacitor atc700b0r3bt500xt atc c17 39 pf chip capacitor atc700b390ft500xt atc c20, c21 22 f, 35 v tantalum capacitors t491x226k035at kemet c22 470 f, 63 v electrolytic capacitor esme630ell471mk25s united chemi - con l1 7.15 nh inductor 1606 - 7j coilcraft l2 8.0 nh inductor a03t coilcraft r1 15 , 1/3 w chip resistor crcw121015r0fkea vishay r2 560 k , 1/4 w chip resistor crcw12065603fkea vishay lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9125NR1 mrf6s9125nbr1 5 rf device data freescale semiconductor figure 2. MRF6S9125NR1(nbr1) test circuit component layout cut out area c9 r2 c10 v gg v dd c8 c7 c1 c2 c3 c5 l1 c4 c6 c12 c13 c15 c16 c17 c14 l2 c11 c23 c18 c19 c20 c21 c22 900 mhz to272 wb rev. 0 r1 lifetime buy last order 3 apr 08 last ship 1 oct 08
6 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 typical characteristics g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) ?25 ?20 910 850 irl g ps acpr f, frequency (mhz) figure 3. single - carrier n - cdma broadband performance @ p out = 27 watts avg. 890 880 870 860 18.5 20.5 20.3 ?70 34 32 30 ?40 ?50 ?60 d , drain efficiency (%) 20 19.8 19.5 19.3 19 ?30 900 alt1 ?15 ?10 ?5 v dd = 28 vdc, p out = 27 w (avg.) i dq = 950 ma, n?cdma is?95 pilot sync, paging, traffic codes 8 through 13 g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) ?25 ?20 910 850 irl g ps acpr f, frequency (mhz) figure 4. single - carrier n - cdma broadband performance @ p out = 62.5 watts avg. 900 890 880 870 860 18 19.6 19.4 ?70 52 48 44 ?40 ?50 ?60 d , drain efficiency (%) 19.2 19 18.8 18.6 18.4 ?30 ?15 ?10 ?5 v dd = 28 vdc, p out = 62.5 w (avg.) i dq = 950 ma, n?cdma is?95 pilot sync, paging, traffic codes 8 through 13 figure 5. two - tone power gain versus output power 100 16 22 i dq = 1475 ma p out , output power (watts) pep 20 18 10 g ps , power gain (db) 21 19 1187 ma 950 ma 1 300 v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two?tone measurements figure 6. third order intermodulation distortion versus output power ?30 ?10 1 p out , output power (watts) pep 10 ?20 100 ?60 ?40 intermodulation distortion (dbc) imd, third order ?50 18.2 40 17 712 ma 475 ma 18.8 28 d d alt1 300 i dq = 1425 ma 1187 ma 950 ma 712 ma 475 ma v dd = 28 vdc f1 = 880 mhz, f2 = 880.1 mhz two?tone measurements lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9125NR1 mrf6s9125nbr1 7 rf device data freescale semiconductor typical characteristics figure 7. intermodulation distortion products versus output power 10 ?70 ?10 7th order p out , output power (watts) pep 5th order 3rd order ?20 ?30 ?40 1 300 imd, intermodulation distortion (dbc) ?50 ?60 100 figure 8. intermodulation distortion products versus tone spacing 10 ?60 ?10 0.1 7th order two?tone spacing (mhz) v dd = 28 vdc, p out = 125 w (pep) i dq = 950 ma, two?tone measurements (f1 + f2)/2 = center frequency of 880 mhz 5th order ?20 ?30 ?40 ?50 1 100 imd, intermodulation distortion (dbc) figure 9. pulsed cw output power versus input power 36 56 29 p3db = 52.4 dbm (172.5 w) p in , input power (dbm) v dd = 28 vdc, i dq = 950 ma pulsed cw, 8 sec(on), 1 msec(off) f = 880 mhz 54 52 50 48 30 32 31 34 33 35 actual ideal 55 53 49 51 28 p out , output power (dbm) figure 10. single - carrier n - cdma acpr, alt1, power gain and drain efficiency versus output power 0 ?80 p out , output power (watts) avg. 50 ?30 40 ?40 30 ?50 20 ?60 10 0.1 10 ?70 alt1 d g ps t c = ?30 c 85 c acpr d , drain efficiency (%), g ps , power gain (db) v dd = 28 vdc, i dq = 950 ma f = 880 mhz, n?cdma is?95 (pilot sync, paging, traffic codes 8 through 13) alt1, channel power (dbc) acpr, adjacent channel power ratio (dbc) 3rd order ?30 c p1db = 51.5 dbm (139.3 w) 1 100 200 25 c 85 c 25 c ?30 c 25 c 25 c 85 c v dd = 28 vdc, i dq = 950 ma f1 = 880 mhz, f2 = 880.1 mhz two?tone measurements 0 lifetime buy last order 3 apr 08 last ship 1 oct 08
8 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 typical characteristics 100 22 1 0 70 p out , output power (watts) cw figure 11. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 950 ma f = 880 mhz t c = ?30 c ?30 c 85 c 10 21 20 18 16 60 50 40 30 20 d , drain efficiency (%) g ps d g ps , power gain (db) figure 12. power gain versus output power p out , output power (watts) cw v dd = 24 v g ps , power gain (db) 250 16 21 0 17 19 18 20 i dq = 950 ma f = 880 mhz 19 17 15 10 25 c 50 100 200 28 v 32 v 200 85 c 25 c 150 figure 13. mttf factor versus junction temperature 250 10 8 90 t j , junction temperature ( c) this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 27 w avg., and d = 31%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9125NR1 mrf6s9125nbr1 9 rf device data freescale semiconductor n - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 14. single - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 750 khz offset. alt1 measured in 30 khz bandwidth @ 1.98 m hz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) . . . . . . .. . . . . . .. . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . ... . . .. . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .. . . .. . . . . . . . . . .. . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . .. . . . . . . .... . . . . . . . ... . . . ... .. .. . .. . .. . . . . . . . . ... . . . . ... . . . . . . . . . . .. ... . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... ... . . . .. . . . . . . . . . . . . . . . . .. . . . . . . . . . .. .. .. ... . . . . . .. ... . . . . . .. . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . .. . . .. . . . . . . . . . . . . . . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . .. . .. ... . . . . . .... . . . . . . . . .. . . . . . . . . . . . . . . . . . . ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 +acpr in 30 khz integrated bw 1.2288 mhz channel bw 2.9 0.7 2.2 1.5 0 ?0.7 ?1.5 ?2.2 ?2.9 ?3.6 3.6 f, frequency (mhz) figure 15. single - carrier n - cdma spectrum ?acpr in 30 khz integrated bw ?alt1 in 30 khz integrated bw +alt1 in 30 khz integrated bw lifetime buy last order 3 apr 08 last ship 1 oct 08
10 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 f = 860 mhz figure 16. series equivalent source and load impedance f mhz z source z load 860 865 870 1.48 - j0.14 1.66 - j0.02 1.56 - j0.09 0.62 - j2.13 0.64 - j2.31 0.62 - j2.45 v dd = 28 vdc, i dq = 950 ma, p out = 27 w avg. 875 880 1.74 + j0.11 1.73 + j0.04 0.59 - j2.43 0.57 - j2.42 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network 885 890 895 1.68 + j0.19 1.52 + j0.33 1.61 + j0.25 0.54 - j2.36 0.57 - j2.18 0.58 - j1.94 900 1.48 + j0.37 0.59 - j1.86 z o = 5 f = 900 mhz z source f = 900 mhz f = 860 mhz z load lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9125NR1 mrf6s9125nbr1 11 rf device data freescale semiconductor edge characterization figure 17. MRF6S9125NR1(nbr1) test circuit schematic z9 0.620 x 0.100 x 0.420 taper z10 0.420 x 0.100 x 0.220 taper z11 0.325 x 0.220 microstrip z12 0.040 x 0.220 microstrip z13 0.475 x 0.080 microstrip z14 0.400 x 0.080 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1, z15 0.150 x 0.080 microstrip z2 1.050 x 0.080 microstrip z3 0.330 x 0.220 microstrip z4 0.220 x 0.100 x 0.420 taper z5 0.420 x 0.100 x 0.620 taper z6 0.200 x 0.620 microstrip z7, z8 0.040 x 0.620 microstrip v bias v supply rf output rf input dut c6 l1 z1 c5 z2 z3 c4 z4 z5 z6 z7 z8 l2 c21 c9 c16 c18 c19 c20 c1 z9 z10 z11 + + + + c2 + c3 c7 c11 z12 c12 c13 c14 z13 c15 z14 c17 + z15 c10 c8 r1 table 7. MRF6S9125NR1(nbr1) test circuit component designations and values part description part number manufacturer c1, c2 47 f, 16 v tantalum capacitors t491d476k016at kemet c3, c16, c17 0.56 f, 50 v chip capacitors c1825c564j5gac kemet c4 20 pf chip capacitor atc100b200ft500xt atc c5, c7, c8 6.2 pf chip capacitors atc100b6r2bt500xt atc c6, c13 0.8 - 8.0 pf variable capacitors, gigatrim 27291sl johanson dielectrics c9, c10 11 pf chip capacitors atc100b110ft500xt atc c11 5.1 pf chip capacitor atc100b5r1bt500xt atc c12 4.7 pf chip capacitor atc100b4r7bt500xt atc c14 0.3 pf chip capacitor atc700b0r3bt500xt atc c15 39 pf chip capacitor atc700b390ft500xt atc c18, c19 22 f, 35 v tantalum capacitors t491x226k035at kemet c20 470 f, 63 v electrolytic capacitor esme630ell471mk25s united chemi - con c21 100 f, 50 v electrolytic capacitor mcht101m1hb - 1017 - rf multicomp l1 7.15 nh inductor 1606 - 7 coilcraft l2 8 nh inductor a03t - 5 coilcraft r1 15 , 1/4 w chip resistor crcw120615r0fkea vishay lifetime buy last order 3 apr 08 last ship 1 oct 08
12 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 edge characterization figure 18. MRF6S9125NR1(nbr1) test circuit component layout cut out area c1 900 mhz to?272 wb rev. 2 c21 c2 c3 l1 c4 r1 c8 c7 c6 c5 c9 c13 c11 l2 c10 c16 c17 c18 c19 c14 c15 c20 c12 lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9125NR1 mrf6s9125nbr1 13 rf device data freescale semiconductor edge characterization figure 19. evm versus frequency figure 20. evm and drain efficiency versus output power f, frequency (mhz) p out = 70 w avg. 60 w avg. 20 w avg. v dd = 28 vdc i dq = 700 ma p out , output power (watts) avg. 300 6 15 v dd = 28 vdc i dq = 700 ma f = 943 mhz edge modulation 12 9 0 10 1 3 30 75 60 45 0 15 t c = 25 c evm 980 ?82.5 ?52.5 900 sr @ 400 khz f, frequency (mhz) figure 21. spectral regrowth at 400 khz and 600 khz versus frequency v dd = 28 vdc, i dq = 700 ma f = 943 mhz, edge modulation ?60 ?75 910 920 930 940 950 960 970 p out = 70 w avg. 60 w avg. 20 w avg. 70 w avg. t c = 25 c ?75 ?45 0 p out , output power (watts) ?48 ?51 ?54 ?57 ?60 ?63 ?66 ?69 ?72 22.5 v dd = 28 vdc i dq = 700 ma f = 943 mhz edge modulation figure 22. spectral regrowth at 400 khz versus output power d d , drain efficiency (%) evm, error vector magnitude (% ms) 990 0 5 900 4.5 3 2.5 1.5 1 0.5 980 970 960 950 940 930 910 4 3.5 2 evm, error vector magnitude (% ms) spectral regrowth @ 400 khz and 600 khz (dbc) spectral regrowth @ 400 khz (dbc) figure 23. spectral regrowth at 600 khz versus output power ?83 ?53 p out , output power (watts) ?56 ?59 ?62 ?65 ?68 ?71 ?74 ?77 ?80 spectral regrowth @ 600 khz (dbc) 920 100 ?67.5 sr @ 600 khz 60 w avg. 20 w avg. 45 67.5 90 112.5 135 0 22.5 45 67.5 90 112.5 135 t c = 25 c v dd = 28 vdc i dq = 700 ma f = 943 mhz edge modulation lifetime buy last order 3 apr 08 last ship 1 oct 08
14 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 edge characterization test signal figure 24. edge spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?100 200 khz span 2 mhz center 943 mhz ?110 400 khz 600 khz 400 khz 600 khz (db) reference power vbw = 30 khz sweep time = 70 ms rbw = 30 khz lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9125NR1 mrf6s9125nbr1 15 rf device data freescale semiconductor z o = 5 z load f = 900 mhz z source f = 980 mhz f = 900 mhz f = 980 mhz v dd = 28 vdc, i dq = 700 ma, p out = 60 w avg. f mhz z source z load 900 1.04 - j2.65 1.66 - j0.56 905 1.04 - j2.60 1.66 - j0.50 910 1.03 - j2.55 1.67 - j0.43 915 1.02 - j2.51 1.68 - j0.37 920 1.01 - j2.46 1.68 - j0.31 925 1.01 - j2.41 1.69 - j0.24 930 1.00 - j2.36 1.70 - j0.18 935 0.98 - j2.32 1.70 - j0.12 940 0.97 - j2.27 1.71 - j0.05 945 0.96 - j2.22 1.72 - j0.00 950 0.95 - j2.17 1.73 + j0.07 955 0.94 - j2.12 1.74 + j0.14 960 0.94 - j2.08 1.76 + j0.20 965 0.93 - j2.03 1.77 + j0.26 970 0.93 - j1.99 1.79 + j0.32 975 0.92 - j1.94 1.80 + j0.39 980 0.92 - j1.90 1.82 + j0.45 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 25. series equivalent source and load impedance for edge characterization tests lifetime buy last order 3 apr 08 last ship 1 oct 08 z source z load input matching network device under test output matching network
16 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 package dimensions
MRF6S9125NR1 mrf6s9125nbr1 17 rf device data freescale semiconductor
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MRF6S9125NR1 mrf6s9125nbr1 19 rf device data freescale semiconductor
20 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1
MRF6S9125NR1 mrf6s9125nbr1 21 rf device data freescale semiconductor
22 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over - molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 5 aug. 2008 ? listed replacement part and device migration notification reference number, p. 1 ? removed total device dissipation from max ratings table as data was redundant (information already provided in thermal characteristics table), p. 1 ? added case operating temperature limit to the maximum ratings table and set limit to 150 c, p. 1 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table, related ?continuous use at maximum temperature will affect mttf? footnote added and changed 200 c to 225 c in capable plastic package bullet, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) , and added ?measured in functional test?, on characteristics table, p. 2 ? removed forward transconductance from on characteristics table as it no longer provided usable information, p. 2 ? updated pcb information to show more specific material details, figs. 1, 17, test circuit schematic, p. 4, 11 ? updated part numbers in tables 6, 7, component designations and values, to latest rohs compliant part numbers, p. 4, 11 ? adjusted scale for fig. 8, intermodulation distortion products versus tone spacing, p. 7 ? removed lower voltage tests from fig. 12, power gain versus output power, due to fixed tuned fixture limitations, p. 8 ? replaced fig. 13, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 8 ? replaced case outline 1486 - 03, issue c, with 1486 - 03, issue d, p. 16 - 18. added pin numbers 1 through 4 on sheet 1. ? replaced case outline 1484 - 04, issue d, with 1484 - 04, issue e, p. 19 - 21. added pin numbers 1 through 4 on sheet 1, replacing gate and drain notations with pin 1 and pin 2 designations. ? added product documentation and revision history, p. 22
MRF6S9125NR1 mrf6s9125nbr1 23 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006, 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s9125n rev. 5, 8/2008 document number: mrf6s9125n rev. 5, 8/2008 rohs- compliant and/or pb - free versions of freescale products have the functionality and electrical characteristics of their non - rohs- compliant and/or non - pb - free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products pr ogram, go to http: //www .freescale.com/epp.

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